Micron has introduced the world's first UFS 4.1 and UFS 3.1 memory chips based on the G9 architecture, which will help expand the capabilities of artificial intelligence on mobile devices.
The new chips will appear in flagship smartphones shortly after the release of Micron 1y LPDDR5X RAM, which is expected in early 2026.
The UFS 4.1 and UFS 3.1 memory chips, based on the G9 process technology, offer improved power efficiency as well as increased read and write speeds. They will be available in capacities from 256GB to 1TB and are designed for use in ultra-thin and flexible smartphones.
In addition to hardware improvements, Micron has also implemented software optimizations to improve performance and improve the user experience when performing AI tasks. For example, UFS 4.1 storage supports Zoned UFS, which increases read-write efficiency and reduces the effect of "wear" of memory cells. Data Defragmentation technology improves the efficiency of moving and defragmenting data within the drive by 60%. Pinned WriteBooster speeds up access to data in the WriteBooster buffer by 30%.
Another feature, Intelligent Latency Tracker, automatically analyzes drive latency for improved diagnostics. This feature is also available in UFS 3.1, while other software improvements are exclusive to UFS 4.1 chips.